Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1736318
Reference17 articles.
1. High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers
2. Minority Carrier Lifetime of GaAs on Silicon
3. Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
4. High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates
5. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates
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