Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si-Reference-Cited by-同舟云学术

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Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si

Published:2024-07 Issue:4 Volume:14 Page:616-622
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Li Brian¹^ORCID,Dhingra Pankul¹^ORCID,Hool Ryan D.¹^ORCID,Fan Shizhao¹^ORCID,Lee Minjoo Larry¹^ORCID

Affiliation:

1. University of Illinois Urbana-Champaign, Champaign, IL, USA

Funder

NASA Space Technology Research Fellowships

Solar Energy Technologies Office

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/5503869/10566077/10504268-aam.pdf

Reference27 articles.

1. Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

2. Solar cell efficiency tables (Version 61)

3. III N V semiconductors for solar photovoltaic applications

4. Spectrum-optimized Si-based III-V multijunction photovoltaics

5. Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

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