Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126200
Reference13 articles.
1. Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices
2. Minority Carrier Lifetime of GaAs on Silicon
3. High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers
4. Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
5. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
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