Short-wave infrared (SWIR) photodetection by InAs/GaAs quantum dot heterostructures grown on Ge (100) substrate without Migration Enhanced Epitaxy layer-Reference-Cited by-同舟云学术

Short-wave infrared (SWIR) photodetection by InAs/GaAs quantum dot heterostructures grown on Ge (100) substrate without Migration Enhanced Epitaxy layer

Published:2020-12 Issue: Volume:148 Page:106714
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Kumar Ravinder,Panda Debiprasad,Saha Jhuma,Gazi Sanowar Alam,Chakrabarti Subhananda

Funder

Science and Engineering Research Board

Department of Science and Technology

Nano Mission

DST-SERI

Abdul Kalam Technology Innovation National Fellowship

Indian Space Research Organization

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference60 articles.

1. Quantum dots;Tomić,2017

2. InAs/GaAs pyramidal quantum dots: strain distribution, optical phonons, and electronic structure;Grundmann;Phys. Rev. B,1995

3. Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution;Zhong-Sheng;Chin. Phys.,2000

4. Optimization of the number of stacks in the submonolayer quantum dot heterostructure for infrared photodetectors;Das;IEEE Trans. Nanotechnol.,2016

5. February). Effect of various capping layer on the hydrostatic and biaxial strain of InAs QDs in x (100) and z (001) direction;Saha,2018

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