Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632037
Reference39 articles.
1. Hole transport in coupled SiGe quantum dots for quantum computation
2. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures
3. Size distribution and electroluminescence of self-assembled Ge dots
4. Electroluminescence of self-assembled Ge hut clusters
5. Optoelectronic properties of thick SiGe layers grown as small mesas by low pressure chemical vapor deposition
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