Dislocation generation of GaAs on Si in the cooling stage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102951
Reference11 articles.
1. The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates
2. Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substrates
3. High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface
4. Atomic structure of the GaAs/Si interface
5. Quantitative defect etching of GaAs on Si: Is it possible?
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