Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343113
Reference16 articles.
1. 14.5% conversion efficiency GaAs solar cell fabricated on Si substrates
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3. Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates
4. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates
5. Photoluminescence Study of GaAs Grown Directly on Si Substrates
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