Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition
Author:
Affiliation:
1. National Institute of Information and Communications Technology 1 , Koganei, Tokyo 184-8795, Japan
2. Department of Physics and Electronics, Osaka Metropolitan University 2 , Sakai, Osaka 599-8531, Japan
Abstract
Funder
Ministry of Internal Affairs and Communications
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/6.0002625/18018554/042712_1_6.0002625.pdf
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4. A review of Ga2O3materials, processing, and devices
5. 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
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2. Experimental determination of critical thickness limitations of (010) β -(AlxGa1−x)2O3 heteroepitaxial films;Applied Physics Letters;2023-11-27
3. Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga2O3 RF MOSFETs Using (Al x Ga1-x )2O3 Back-Barrier;IEEE Electron Device Letters;2023-11
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