Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2730748
Reference20 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. A comparative study of surface passivation on AlGaN/GaN HEMTs
3. Influence of SiO2 and Si3N4 passivation on AlGaN∕GaN∕Si HEMT performance
4. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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