Influence of SiO2 and Si3N4 passivation on AlGaN∕GaN∕Si HEMT performance
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030748?crawler=true&mimetype=application/pdf
Reference7 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors
3. A comparative study of surface passivation on AlGaN/GaN HEMTs
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