On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab92ee/pdf
Reference31 articles.
1. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate
2. 280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations
3. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
4. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
5. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
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