Affiliation:
1. Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China
2. State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Nanning 530004, China
Abstract
The applications of three-dimensional materials combined with two-dimensional materials are attractive for constructing high-performance electronic and photoelectronic devices because of their remarkable electronic and optical properties. However, traditional preparation methods usually involve mechanical transfer, which has a complicated process and cannot avoid contamination. In this work, chemical vapor deposition was proposed to vertically synthesize self-assembly oriented hexagonal boron nitride on gallium nitride directly. The material composition, crystalline quality and orientation were investigated using multiple characterization methods. Thermal conductivity was found to be enhanced twofold in the h-BN incorporated sample by using the optothermal Raman technique. A vertical-ordered (VO)h-BN/GaN heterojunction photodetector was produced based on the synthesis. The photodetector exhibited a high ultraviolet photoresponsivity of up to 1970.7 mA/W, and detectivity up to 2.6 × 1013 Jones, and was stable in harsh high temperature conditions. Our work provides a new synthesis method to prepare h-BN on GaN-based materials directly, and a novel vertically oriented structure of VO-h-BN/GaN heterojunction, which has great application potential in optoelectronic devices.
Funder
Bagui Talent of Guangxi province
Talent Model Base
National Key Research and Development Program, Disinfection Robot Based on High Power AlGaN-based UVLEDs
Guangxi Science and Technology Program
Guangxi University Foundation
Guangxi Science and Technology Base and talent Special project
National Key Research and Development Program
High Luminous Efficiency and Long Life DUV LED Technology
Subject
General Materials Science,General Chemical Engineering
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