280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations-Reference-Cited by-同舟云学术

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280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

Published:2005 Issue:18 Volume:41 Page:1004
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Wakejima A.,Matsunaga K.,Okamoto Y.,Ando Y.,Nakayama T.,Kasahara K.,Miyamoto H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20052513?crawler=true&mimetype=application/pdf

Reference9 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers;IEICE Transactions on Electronics;2021-10-01

2. On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate;Applied Physics Express;2020-05-28

3. Bibliography;Wireless Power Transfer via Radiowaves;2014-01-17

4. Wireless Power Transfer via Radiowaves;WAVE SER;2013-12-30

5. AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading;IEEE Transactions on Electron Devices;2010-05

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