Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01486-6.pdf
Reference44 articles.
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4. Manfra MJ, Weimann N, Baeyens Y, Roux P, Tennant DM (2003) Unpassivated AlGaN∕GaN HEMTs with CW power density of 3.2 W∕mm at 25 GHz grown by plasma-assisted MBE. Electron Lett 39:694
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1. Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs;Journal of Ovonic Research;2023-12-20
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