Unpassivated AlGaN∕GaN HEMTs with CW power density of 3.2 W∕mm at 25 GHz grown by plasma-assisted MBE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030451?crawler=true&mimetype=application/pdf
Reference8 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
3. AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy
4. State-of-art CW power density achieved at 26 GHz by AlGaN∕GaN HEMTs
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