Electrical characterization of AlGaN/GaN/Si high electron mobility transistors-Reference-Cited by-同舟云学术

Electrical characterization of AlGaN/GaN/Si high electron mobility transistors

Published:2022-04-12 Issue:2 Volume:18 Page:159-165
ISSN:1584-9953
Container-title:Journal of Ovonic Research
language:
Short-container-title:JOR

Author:

Mosbahi H., ,Gassoumi M,Guesmi A.,Ben Hamadi N.,Zaidi M.A., , , ,

Abstract

AlGaN/GaN/Si HEMTs have been investigated using current-voltage-temperature and CDLTS measurements.As has been found from current voltage measurements, parasitic effects were revealed indicating the presence of traps in HEMT device. As a result, the origins of traps are determined from CDLTS experiments.

Publisher

Virtual Company of Physics

Subject

Surfaces, Coatings and Films,Physics and Astronomy (miscellaneous),Electronic, Optical and Magnetic Materials

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