Controlled growth of SiGe nanowires by addition of HCl in the gas phase-Reference-Cited by-同舟云学术

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Controlled growth of SiGe nanowires by addition of HCl in the gas phase

Published:2011-07-15 Issue:2 Volume:110 Page:024311
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Potié Alexis,Baron Thierry,Latu-Romain Laurence,Rosaz Guillaume,Salem Bassem,Montès Laurent,Gentile Pascal,Kreisel Jens,Roussel Hervé

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3610409

Reference43 articles.

1. Strained Si CMOS (SS CMOS) technology: opportunities and challenges

2. High-mobility Si and Ge structures

3. SiGe nanostructures

4. Chemical vapor deposition of silicon–germanium heterostructures

5. Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping

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1. Nanowire-Based Si-CMOS Devices;Springer Tracts in Electrical and Electronics Engineering;2024

2. Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor;Nanomaterials;2023-02-04

3. Superior Thermoelectric Performance of SiGe Nanowires Epitaxially Integrated into Thermal Micro‐Harvesters;Small;2023-01-31

4. Impact of Ge clustering on the thermal conductivity of SiGe nanowires: atomistic simulation study;Physical Chemistry Chemical Physics;2023

5. Planar Growth, Integration, and Applications of Semiconducting Nanowires;Advanced Materials;2019-11-20

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