Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2215633
Reference7 articles.
1. Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures
2. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
3. Scattering mechanisms in high-mobility strained Ge channels
4. Ultrahigh room-temperature hole mobility in a SiGe quantum well
5. High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Temperature-dependent transport properties of two-dimensional hole gas in Ge channel modulation-doped square quantum wells;Journal of Physics: Conference Series;2020-03-01
2. Mobility of carrier in the single-side and double-side doped square quantum wells;The European Physical Journal B;2017-06
3. The main scattering mechanisms in Single-side modulation doped square quantum wells;Journal of Physics: Conference Series;2017-06
4. Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(0 0 1) substrate;Solid-State Electronics;2015-08
5. Germanium Based Field-Effect Transistors: Challenges and Opportunities;Materials;2014-03-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3