Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1473690
Reference10 articles.
1. High-mobility Si and Ge structures
2. Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
3. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
4. Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications
5. High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures
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