Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(0 0 1) substrate-Reference-Cited by-同舟云学术

Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(0 0 1) substrate

Published:2015-08 Issue: Volume:110 Page:35-39
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Myronov Maksym,Morrison Christopher,Halpin John,Rhead Stephen,Foronda Jamie,Leadley David

Funder

EPSRC

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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