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Chemical vapor deposition of silicon–germanium heterostructures

Published:2000-06 Issue:1-4 Volume:216 Page:171-184
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bozzo S,Lazzari J.-L,Coudreau C,Ronda A,Arnaud d’Avitaya F,Derrien J,Mesters S,Hollaender B,Gergaud P,Thomas O

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference54 articles.

1. Silicon germanium heterostructures in electronics: the present and the future

2. High-mobility Si and Ge structures

3. 50 GHz Si1 − xGex heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy

4. E.F. Crabbé, B.S. Meyerson, J.M.C. Stork, D.L. Harame, IEDM Tech. Digest (1993), p. 83.

5. Recent advances with SiGe heterojunction bipolar transistors

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