Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3234380
Reference54 articles.
1. Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD
2. Prospects for 3C-SiC bulk crystal growth
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
5. Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates
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1. Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case;physica status solidi (b);2022-03-04
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4. Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition;physica status solidi (a);2021-10-31
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