Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126136
Reference14 articles.
1. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
2. Observation of MBE-grown and interfaces by high resolution transmission electron microscope
3. How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy
4. Epitaxial growth and optical transitions of cubic GaN films
5. MBE growth of cubic GaN on GaAs substrates
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