How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy-Reference-Cited by-同舟云学术

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How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy

Published:1998-08-15 Issue:4 Volume:84 Page:2295-2300
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Daudin B.,Feuillet G.,Hübner J.,Samson Y.,Widmann F.,Philippe A.,Bru-Chevallier C.,Guillot G.,Bustarret E.,Bentoumi G.,Deneuville A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.368296

Reference17 articles.

1. Growth and characterization of cubic GaN

2. Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy

3. Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

4. Comparative study of hexagonal and cubic GaN growth by RF-MBE

5. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

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1. MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1);Journal of Crystal Growth;2023-06

2. Monitoring MBE Substrate Deoxidation via RHEED Image-Sequence Analysis by Deep Learning;Crystal Growth & Design;2023-01-16

3. Cubic GaN and InGaN/GaN quantum wells;Applied Physics Reviews;2022-12

4. Influence of Al _x Ga_1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001);Journal of Physics D: Applied Physics;2022-02-02

5. Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films;Micromachines;2021-10-13

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