Prospects for 3C-SiC bulk crystal growth-Reference-Cited by-同舟云学术

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Prospects for 3C-SiC bulk crystal growth

Published:2008-03 Issue:5 Volume:310 Page:976-981
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chaussende D.,Mercier F.,Boulle A.,Conchon F.,Soueidan M.,Ferro G.,Mantzari A.,Andreadou A.,Polychroniadis E.K.,Balloud C.,Juillaguet S.,Camassel J.,Pons M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. D.R. Hamilton, Silicon Carbide Proceeding Conference, Boston, 1960, p. 43.

2. Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in Hydrogen

3. Characterization of defects in 3C-silicon carbide crystals

4. Investigation of growth processes of ingots of silicon carbide single crystals

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality;Crystal Growth & Design;2022-08-22

2. Review of Sublimation Growth of SiC Bulk Crystals;Materials Science Forum;2022-05-31

3. Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates;Applied Physics A;2022-01-14

4. Status of 3 C ‐ SiC Growth and Device Technology;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

5. New Approaches and Understandings in the Growth of Cubic Silicon Carbide;Materials;2021-09-16

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