Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy-Reference-Cited by-同舟云学术

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Published:2022 Issue:39 Volume:24 Page:24487-24494
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Vanacore G. M.¹^ORCID,Chrastina D.²^ORCID,Scalise E.¹^ORCID,Barbisan L.¹^ORCID,Ballabio A.²^ORCID,Mauceri M.³,La Via F.⁴^ORCID,Capitani G.⁵^ORCID,Crippa D.⁶,Marzegalli A.¹^ORCID,Bergamaschini R.¹^ORCID,Miglio L.¹⁷^ORCID

Affiliation:

1. L-NESS and Department of Materials Science, University of Milano-Bicocca, via Cozzi 55, 20125, Milano, Italy

2. L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, 22100, Como, Italy

3. LPE S.P.A., XVI Strada Pantano d'Arci, 95121 Catania, Italy

4. IMM-CNR, VIII Strada 5, 95121 Catania, Italy

5. L-NESS and Department of Geological Sciences and Geotechnology, University of Milano-Bicocca, via Cozzi 55, 20125, Milano, Italy

6. LPE S.P.A., via Falzarego 8, 20021 Baranzate, Italy

7. Pilegrowth Tech S.R.L., via Falzarego 8, 20021 Baranzate, Italy

Abstract

Micron-wide, highly-oriented 3C-SiC platelets are obtained by stacking-fault-driven growth anisotropy.

Funder

H2020 Industrial Leadership

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP03250C

Reference27 articles.

1. New Approaches and Understandings in the Growth of Cubic Silicon Carbide

2. Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

3. Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

4. Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

5. The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach