The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach
Author:
Affiliation:
1. L-NESS and Department of Materials Science
2. Università degli Studi di Milano-Bicocca
3. Milano
4. Italy
5. V. Lashkarev Institute of Semiconductor Physics
6. L-NESS and Department of Physics
Abstract
Dislocation complexes are identified as killer defects in 3C-SiC/Si(001) by a synergistic approach of molecular dynamics and ab initio simulations.
Funder
H2020 LEIT Advanced Materials
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC00909A
Reference69 articles.
1. G. L. Harris , Properties of silicon carbide , EMIS n 13, INSPEC , London , 1995 , https://trove.nla.gov.au/version/45147380
2. G. Kovacs , Micromachined Transducers Sourcebook , McGraw-Hill Science/Engineering/Math , Boston , 1998
3. Method of Comparing the Hardness of Electric Furnace Products and Natural Abrasives
4. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy
5. Towards a unified view of polytypism in silicon carbide
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Exploring defect behavior in helium-irradiated single-crystal and nanocrystalline 3C-SiC at 800°C: A synergy of experimental and simulation techniques;Acta Materialia;2024-10
2. SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure;Solid State Phenomena;2024-08-27
3. 2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires;ACS Applied Nano Materials;2024-04-15
4. High-throughput thermodynamic study of SiC high-temperature chemical vapor deposition from TMS-H2;Journal of Crystal Growth;2024-01
5. Exploring Defect Behavior in Helium-Irradiated Single-Crystal and Nano-Engineered 3C-SiC at 800°C: A Synergy of Experimental and Simulation Techniques;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3