The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach-Reference-Cited by-同舟云学术

The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Published:2020 Issue:25 Volume:8 Page:8380-8392
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Scalise Emilio¹²³⁴^ORCID,Barbisan Luca¹²³⁴^ORCID,Sarikov Andrey¹²³⁴⁵^ORCID,Montalenti Francesco¹²³⁴^ORCID,Miglio Leo¹²³⁴^ORCID,Marzegalli Anna¹²³⁴⁶^ORCID

Affiliation:

1. L-NESS and Department of Materials Science

2. Università degli Studi di Milano-Bicocca

3. Milano

4. Italy

5. V. Lashkarev Institute of Semiconductor Physics

6. L-NESS and Department of Physics

Abstract

Dislocation complexes are identified as killer defects in 3C-SiC/Si(001) by a synergistic approach of molecular dynamics and ab initio simulations.

Funder

H2020 LEIT Advanced Materials

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC00909A

Reference69 articles.

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3. Method of Comparing the Hardness of Electric Furnace Products and Natural Abrasives

4. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy

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