Towards a unified view of polytypism in silicon carbide
Author:
Affiliation:
1. a Department of Crystallography , Birkbeck College, University of London , Malet Street, London , WC1E 7HX , England
2. b Monsanto Electronic Materials Company , Milton Keynes , MK2 STB , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008205522
Reference26 articles.
1. VII. Über die Krystalle des Carborundums
2. Phase transformations, habit changes and crystal growth in SiC
3. The growth of crystals and the equilibrium structure of their surfaces
4. CXL. Dislocations in thin plates
5. Use of synchrotron radiation sources for X-ray diffraction topography of polytypic structures
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