Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922246
Reference35 articles.
1. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
2. Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates
3. The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures
4. Metamorphic quantum dots: Quite different nanostructures
5. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
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1. Electron levels of defects in In(Ga)As/(In)GaAs nanostructures: A review;Semiconductor Physics, Quantum Electronics and Optoelectronics;2024-06-21
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3. Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy;Journal of Luminescence;2022-11
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5. InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels;Microelectronic Engineering;2021-02
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