2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1669067
Reference10 articles.
1. Low-threshold oxide-confined 1.3-μm quantum-dot laser
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3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
4. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
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