Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers-Reference-Cited by-同舟云学术

Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers

Published:2022-07 Issue: Volume:263 Page:111840
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Datsenko Oleksandr I.,Golovynskyi Sergii,Suárez Isaac,Muñoz-Matutano Guillermo,Trevisi Giovanna,Frigeri Paola,Seravalli Luca

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference66 articles.

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3. InGaAsP/InP nanocavity for single-photon source at 1.55-μm telecommunication band;Song;Nanoscale Res. Lett.,2017

4. Structural and optical properties of InAs/(In)GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K;Carmesin;Phys. Rev. B,2018

5. InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review;Portalupi;Semicond. Sci. Technol.,2019

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