Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates-Reference-Cited by-同舟云学术

Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

Published:2004-03-08 Issue:4 Volume:15 Page:S283-S287
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Semenova E S,Zhukov A E,Mikhrin S S,Egorov A Yu,Odnoblyudov V A,Vasil ev A P,Nikitina E V,Kovsh A R,Kryzhanovskaya N V,Gladyshev A G,Blokhin S A,Musikhin Yu G,Maximov M V,Shernyakov Yu M,Ustinov V M,Ledentsov N N

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/15/i=4/a=031/pdf

Reference15 articles.

1. Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE

2. Ultra-high speed modulation-doped field-effect transistors: a tutorial review

3. Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

4. InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

5. A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

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