Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Published:2022-11 Issue: Volume:251 Page:119155
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Al Huwayz M.,Galeti H.V.A.^ORCID,Lemine O.M.,Ibnaouf K.H.,Alkaoud A.,Alaskar Y.,Salhi A.,Alhassan S.,Alotaibi S.,Almalki A.,Almunyif A.,Alhassni A.,Jameel D.A.,Gobato Y. Galvão,Henini M.

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo

Conselho Nacional de Desenvolvimento Científico e Tecnológico

King Abdulaziz City for Science and Technology

National Plan for Science, Technology and Innovation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

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4. High-power 1.5 mm InAs–InGaAs quantum dot lasers on GaAs substrates;Maksimov;Semiconductors,2004

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1. Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy;Physical Chemistry Chemical Physics;2024

2. Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures;Applied Physics A;2023-05-10