Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy

Published:2024 Issue:1 Volume:26 Page:445-454
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Huwayz M. Al¹²,Jameel D. A.³^ORCID,de Azevedo Walter M.⁴,Felix Jorlandio F.⁵,Saqri N. Al⁶,Lemine O. M.⁷,Alrub S. Abu⁷,Henini M.²

Affiliation:

1. Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh, 11671, Saudi Arabia

2. School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK

3. Department of General Sciences, College of Basic Education, University of Zakho, Zakho, Kurdistan Region Iraq, Iraq

4. Departamento de Química Fundamental, Universidade Federal de Pernambuco (UFPE), 50740-560, Recife/PE, Brazil

5. Institute of Physics, NFA, University of Brasília (UnB), Brasília, DF, 70910-900, Brazil

6. Department of Physics, College of Science, Sultan Qaboos University, Box 36, Al Khoud 123, Oman

7. Department of Physics, College of Sciences, Imam Mohammad Ibn Saud Islamic University (IMISU), Riyadh 11623, Saudi Arabia

Abstract

This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy.

Funder

Al-Imam Muhammad Ibn Saud Islamic University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP03865C

Reference36 articles.

1. Role of charge separation on two-step two photon absorption in InAs/GaAs quantum dot intermediate band solar cells

2. High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates

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4. Gamma irradiation effects on Al/n-Si Schottky junction properties

5. Variation of deep electron traps created by γ irradiation of GaAs