High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates-Reference-Cited by-同舟云学术

High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates

Published:2004-06 Issue:6 Volume:38 Page:732-735
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Maksimov M. V.,Shernyakov Yu. M.,Kryzhanovskaya N. V.,Gladyshev A. G.,Musikhin Yu. G.,Ledentsov N. N.,Zhukov A. E.,Vasil’ev A. P.,Kovsh A. R.,Mikhrin S. S.,Semenova E. S.,Maleev N. A.,Nikitina E. V.,Ustinov V. M.,Alferov Zh. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1766381.pdf

Reference9 articles.

1. B. V. Volovik, D. S. Sizov, A. F. Tsatsul’nikov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1368 (2000) [Semiconductors 34, 1316 (2000)].

2. A. E. Zhukov, B. V. Volovik, S. S. Mikhrin, et al., Pis’ma Zh. Tekh. Fiz. 27(17), 51 (2001) [Tech. Phys. Lett. 27, 734 (2001)].

3. D. Gollub, M. Fisher, and A. Forchel, Electron. Lett. 38, 1183 (2002).

4. W. Ha, V. Gambin, S. Bank, et al., in Abstracts of International Conference on Molecular Beam Epitaxy (San Francisco, USA, 2002), p. 61.

5. L. H. Li, V. Sallet, G. Patriarche, et al., Electron. Lett. 39, 519 (2003).

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy;Physical Chemistry Chemical Physics;2024

2. Introduction and History of Quantum Dot Lasers;Handbook of Radio and Optical Networks Convergence;2024

3. Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy;Journal of Luminescence;2022-11

4. Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications;Journal of Nanoelectronics and Optoelectronics;2022-05-01

5. Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates;Semiconductors;2018-09-06