Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020812?crawler=true&mimetype=application/pdf
Reference7 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1.29 [micro sign]m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
3. 1.3 µm GaInAsN Laserdiodes with improved High Temperature Performance
4. 1.3-μm GaInNAs-AlGaAs distributed feedback lasers
5. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
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1. Electronic Structure and Optical Properties of Zinc-Blende In x Ga 1− x N y As 1−y by a First-Principles Study;Communications in Theoretical Physics;2011-04
2. Theoretical analysis of the effect of temperature dependence of Auger coefficient on the turn-on time delay of uncooled semiconductor laser diodes;Optics Communications;2010-06
3. Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– grown by molecular beam epitaxy;Journal of Crystal Growth;2007-04
4. Spontaneous emission mechanisms of GaInAsN∕GaAs quantum dot systems;Journal of Applied Physics;2006-12-15
5. Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN∕GaAs single quantum wells;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-07
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