DXcenters in AlGaAsp‐nheterojunctions and heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339326
Reference4 articles.
1. Room‐temperature electron trapping in Al0.35Ga0.65As/GaAs modulation‐doped field‐effect transistors
2. On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors
3. Transient capacitance study of electron traps in AlGaAs grown with As2
4. Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Evidence for two Si-related DX like centers in AlxGa1−xAs and GaAs;Solid State Communications;1998-04
2. Confirmation of metastable neutral DX0 state of Si-related DX center in AlxGa1−xAs by transient photoconductivity;Solid State Communications;1997-12
3. DXcenter in AlGaAsSb:Te and a mechanism of its ionization;Journal of Applied Physics;1996-03
4. The influence of the DX centre C-V and I-V characteristics of Schottky barriers in n-type AlGaAs;Semiconductor Science and Technology;1991-10-01
5. Compound semiconductor heterostructure bipolar transistors;IBM Journal of Research and Development;1990-07
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