Transient capacitance study of electron traps in AlGaAs grown with As2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334426
Reference12 articles.
1. Growth of Al0.3Ga0.7As by molecular beam epitaxy in the forbidden temperature range using As2
2. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow
3. Capacitance Transient Spectroscopy
4. Influence of growth conditions and alloy composition on deep electron traps of n-AlxGa1−xAs grown by MBE
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