Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366413
Reference26 articles.
1. A high efficiency V-band monolithic HEMT power amplifier
2. Trapped charge modulation: a new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's
3. Breakdown walkout in pseudomorphic HEMT's
4. HEMT degradation in hydrogen gas
5. Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high‐electron‐mobility transistors
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1. Reliability studies of AlGaN/GaN high electron mobility transistors;Semiconductor Science and Technology;2013-06-21
2. Degradation Mechanisms for GaN and GaAs High Speed Transistors;Materials;2012-11-27
3. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23
4. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs;Acta Physica Sinica;2009
5. Hot-Electron-Induced Degradation in BCB- and SiN-Passivated $\hbox{Al}_{0.25}\hbox{Ga}_{0.75}\hbox{As/In}_{0.2}\hbox{Ga}_{0.8}\hbox{As}$ PHEMTs;IEEE Transactions on Device and Materials Reliability;2007-09
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