Breakdown walkout in pseudomorphic HEMT's-Reference-Cited by-同舟云学术

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Breakdown walkout in pseudomorphic HEMT's

Published:1996-04 Issue:4 Volume:43 Page:543-546
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Menozzi R.,Cova P.,Canali C.,Fantini F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/10358/00485535.pdf?arnumber=485535

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Temperature-dependent reverse-bias stress of normally-off GaN power FETs;Microelectronics Reliability;2013-09

4. DC/RF Hysteresis in Microwave pHEMT Amplifier Induced by Gate Current—Diagnosis and Elimination;IEEE Transactions on Microwave Theory and Techniques;2011-11

5. Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress;IEEE Electron Device Letters;2011-11

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