Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/abb7e2/pdf
Reference35 articles.
1. Improved Modeling of GaN HEMTs on Si Substrate for Design of RF Power Amplifiers
2. Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems
3. A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating
4. Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates
5. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
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1. Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate;physica status solidi (a);2024-08-12
2. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application;Japanese Journal of Applied Physics;2023-08-01
3. Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate;Applied Physics Express;2022-08-23
4. Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates;IEICE Electronics Express;2022-01-10
5. Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate;IEEE Journal of the Electron Devices Society;2022
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