Confirmation of metastable neutral DX0 state of Si-related DX center in AlxGa1−xAs by transient photoconductivity
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
3. Formation of aDXcenter in InP under hydrostatic pressure
4. Room‐temperature electron trapping in Al0.35Ga0.65As/GaAs modulation‐doped field‐effect transistors
5. Effect of traps on low-temperature high electron mobility transistor characteristics
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1. Stretched-exponential photoionization of the metastable defects in gallium doped Cd0.99Mn0.01Te: Statistical origins of the short-time power-law in response data;Journal of Applied Physics;2008-06
2. Ultraviolet excitation of photoconductivity in thin films of sol–gel SnO2;Journal of the European Ceramic Society;2005-01
3. Slow Relaxation of Nonequilibrated Photo-carriers in Semiconductors;Phase Transitions;2004-08
4. On the negative Hubbard correlation energy of the DX center in In-doped CdMnTe;Journal of Applied Physics;2004-02
5. Photoionization kinetics of the DX related center in In-doped Cd1−xMnxTe;physica status solidi (a);2004-02
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