Room‐temperature electron trapping in Al0.35Ga0.65As/GaAs modulation‐doped field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96095
Reference12 articles.
1. Two-dimensional electron gas at a semiconductor-semiconductor interface
2. Mobility Enhancement in Inverted AlxGa1-xAs/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron Separation
3. Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions
4. On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures
5. On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures
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