Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K
2. Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K
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