Compound semiconductor heterostructure bipolar transistors
Author:
Publisher
IBM
Subject
General Computer Science
Link
http://xplorestaging.ieee.org/ielx5/5288520/5389826/05389834.pdf?arnumber=5389834
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002
2. Heterostructure and Compound Semiconductor Devices;Low Temperature Electronics;2001
3. Effect of surface recombination on the Early voltage in HBTs;Semiconductor Science and Technology;1999-08-19
4. GaAs high temperature devices;High Temperature Electronics;1997
5. Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors;Solid-State Electronics;1995-04
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