Al diffusion at AlN/Si interface and its suppression through substrate nitridation-Reference-Cited by-同舟云学术

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

Published:2020-06-08 Issue:23 Volume:116 Page:232105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wei Lai¹,Yang Xuelin¹²^ORCID,Shen Jianfei¹,Liu Danshuo¹,Cai Zidong¹,Ma Cheng¹,He Xiaoguang¹,Tang Jun³,Qi Shengli³,Xu Fujun¹^ORCID,Wang Xinqiang¹²⁴^ORCID,Ge Weikun¹,Shen Bo¹²⁴

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Nano-Optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China

3. Hefei IRICO Epilight Technology Co., Ltd., Hefei 230000, Anhui, China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Funder

Key Research and Development Program of Guangdong Province

National Key Research and Development Program of China

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0006496

Reference28 articles.

1. Epitaxial challenges of GaN on silicon

2. Prospects of III-nitride optoelectronics grown on Si

3. The 2018 GaN power electronics roadmap

4. GaN-on-Si Power Technology: Devices and Applications

5. Sixteen years GaN on Si

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