Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method

Published:2024-05-13 Issue:11 Volume:24 Page:4300-4305
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zhang Yachao¹,Wang Ziming¹^ORCID,Li YiFan¹,Liu Zhihong¹,Zhang Jincheng¹^ORCID,Xu Shengrui¹,Chen Xing¹,Hou Bin¹^ORCID,Bian Jiang¹,Yao Yixin¹,Ma Jinbang¹,Zhang Chunfu¹^ORCID,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

Funder

Jiangsu Provincial Key Research and Development Program

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanxi Province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00714

Reference27 articles.

1. 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

2. 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

3. Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz

4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

5. GaN-Based RF Power Devices and Amplifiers

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP