Electron injection-induced effects in Si-doped β-Ga2O3-Reference-Cited by-同舟云学术

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Electron injection-induced effects in Si-doped β-Ga2O3

Published:2019-01 Issue:1 Volume:9 Page:015127
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Modak Sushrut¹,Lee Jonathan¹,Chernyak Leonid¹^ORCID,Yang Jiancheng²,Ren Fan²^ORCID,Pearton Stephen J.³^ORCID,Khodorov Sergey⁴,Lubomirsky Igor⁴

Affiliation:

1. Department of Physics, University of Central Florida, Orlando, Florida 32816, USA

2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Material Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

4. Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel

Funder

National Science Foundation

Defense Threat Reduction Agency

North Atlantic Treaty Organization

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079730

Reference44 articles.

1. A review of Ga2O3materials, processing, and devices

2. Minority carrier diffusion length and lifetime for electrons in a type-II InAs∕GaSb superlattice photodiode

3. Minority carrier transport in GaN and related materials

4. Electrical properties of bulk semi-insulating β-Ga2O3(Fe)

5. Optical signatures of deep level defects in Ga2O3

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1. Cathodoluminescence studies of electron injection effects in p-type gallium oxide;AIP Advances;2024-08-01

2. Forward bias annealing of proton radiation damage in NiO/Ga₂O₃ rectifiers;Physica Scripta;2024-06-20

3. Influence of Energetic Particles and Electron Injection on Minority Carrier Transport Properties in Gallium Oxide;Condensed Matter;2024-01-06

4. Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga2O3 p–n Heterojunction;Condensed Matter;2023-12-02

5. Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers;Journal of Applied Physics;2023-01-03

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