Minority carrier diffusion length and lifetime for electrons in a type-II InAs∕GaSb superlattice photodiode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1787598
Reference14 articles.
1. Proposal for strained type II superlattice infrared detectors
2. InAs/GaSb infrared photovoltaic detector at 77 K
3. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
4. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
5. Very long wavelength infrared type-II detectors operating at 80 K
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3. Development of Electron Beam Induced Current for diffusion length determination of VLWIR HgCdTe and MWIR T2SL based photodetectors;Infrared Physics & Technology;2018-12
4. Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices;Journal of Applied Physics;2018-06-21
5. Annealing-induced interfacial atomic intermixing in InAs/GaSb type II superlattices;Applied Physics Letters;2017-10-23
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