Annealing-induced interfacial atomic intermixing in InAs/GaSb type II superlattices
Author:
Affiliation:
1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Funder
Harbin Institute of Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4999391
Reference18 articles.
1. Wavelength-extended photovoltaic infrared photodetectors
2. Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array
3. W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency
4. New concepts in infrared photodetector designs
5. Minority carrier diffusion length and lifetime for electrons in a type-II InAs∕GaSb superlattice photodiode
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence;Applied Physics Letters;2020-08-24
2. Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice;physica status solidi (RRL) – Rapid Research Letters;2019-10-14
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